, lj nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRF230-233/irf630-633 mtp12n18/12n20 n-channel power mosfets, 12 a, 150-200 v power and discrete division description these devices are n-channel, enhancement mode, power mosfets designed especially for high power, high speed applications, such as switching power supplies, ups, ac and dc motor controls, relay and solenoid drivers and high energy pulse circuits. low rds(on) vqs rated at 20 v silicon gate for fast switching speeds 'oss. vos(on), specified at elevated temperature rugged low drive requirements ease of paralleling to-204aa to-220ab product summary part number IRF230 irf231 irf232 irf233 irf630 irf631 irf632 irf633 mtp12n18 mtp12n20 vdss 200 v 160 v 200 v 150 v 200 v 150 v 200 v 150 v 180 v 200 v rds (on) 0.40 n 0.40 n o.so n o.so n 0.40 n 0.40 jj o.so n o.so n 0.35 n 0.35 n id at tc = 25c 9.0 a 9.0 a b.o a 8.0 a 9.0 a 9.0 a 8.0 a 8.0 a 12 a 12 a id at tc = 100c 6.0 a 6.0 a 5.0 a 5.0 a 6.0 a 6.0 a 5.0 a 5.0 a 8.5 a 8.5 a case style to-204aa to-220ab not? for information concerning connection diagram and package outline, refer to section 7. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. ni semi-conductors encourages customers to verify that datasheets are current before placing orders. oiinlitv
IRF230-233/irf630-633 mtp12n18/12n20 maximum ratings symbol vdss vdqr vgs tj, ts!g tl characteristic drain to source voltage1 drain to gate voltage1 rgb = 20 ktt gate to source voltage operating junction and storage temperatures maximum lead temperature for soldering purposes, 1/8" from case for 5 s rating irf220/222 irf620/622 mtp7n20 200 200 20 -55 to +150 275 rating mtp7n18 180 180 20 -55 to +150 275 rating irf222/223 irf622/623 150 150 20 -55 to +150 275 unit v v v c c maximum thermal characteristics r?jc pd 'dm thermal resistance, junction to case total power dissipation at tc - 25c pulsed drain current8 irf220 - 233 irf630-633 1.67 75 40 mtp12n18/20 1.25 100 40 c/w w a electrical characteristics (tc~25c unless otherwise noted) symbol characteristic mln max unit test conditions off characteristics v(br)dss loss igss drain source breakdown voltage IRF230/232/630/632/ mtp12n20 mtp12n18 irf231/233/631/633 zero gate voltage drain current gate-body leakage current IRF230-233 irf630-633/ mtp12n18/12n20 200 180 150 250 1000 100 500 v ka ma na vas = 0 v, id ?= 250 /ia vds - rated vdss. vgs - 0 v vds - 0.8 x rated vdss. vgs = o v, tc-125c vgs = 20 v, vds = o v
IRF230-233/irf630-633 mtp12n18/12n20 electrical characteristics (cont.) (tc = 25c unless otherwise noted) symbol characteristic mln max unit test conditions on characteristics vqsiui) rds(on) vos(on) sfs gate threshold voltage IRF230/233/630/633 mtp12n18/12n20 static drain-source on-resistance2 IRF230/231/630/631 irf232/233/632/633 mtp12n18/12n20 drain-source on-voltage2 mtp12n18/12n20 forward transconductance 2.0 2.0 3.0 4.0 4.5 0.40 0.50 0.35 2.1 5.0 4.2 v n v v v s (u) |p - 250 jja, vds = ves id - 1 ma, vds = vgs vqs = 10 v, id -5.0 a id -6.0 a vgs -10 v; id = 6.0 a vqs -10 v; id -12.0 a; vgs -10 v; b = 6.0 a tc = 100c vds -10 v, id = 5.0 a dynamic characteristics qss c05s ct8s input capacitance output capacitance reverse transfer capacitance 800 450 150 pf pf pf vds = 25 v, vqs = 0 v f-1.0 mhz switching characteristics (tc = 25c, figures 1, 2)1 t?on) tr tdfrff) t| td(on) tr td(ofl) t( qb turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time total gate charge 30 50 50 40 50 250 100 120 30 ns ns ns ns ns ns ns ns nc vdd - 90 v, 1d - 5.0 a vgs = 10 v, rgen"=15 si rgs = i5 n vdd = 25 v, b = 6,0 a vgs -10 v, rgen-so fl rgs - 50 n vqs -10 v, id =12 a vdd -120 v
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